data sheet 1 of 11 rev. 04.1, 2016-06-16 all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive device?observe handling precautions! ptfa080551e ptfa080551f confidential, limited internal distribution description the ptfa080551e and ptfa080551f are 55-watt ldmos fets designed for edge and cdma power amplifier applications in the 869 to 960 mhz band. features include input matching and thermally- enhanced packages with slotted or earless flanges. manufactured with infineon's advanced ldmos process, these devices provide excellent thermal performance and superior reliability. ptf a080551e package h-36265-2 thermally-enhanced high power rf ldmos fets 55 w, 869 ? 960 mhz three-carrier cdma2000 performance v dd = 28 v, i dq = 450 ma, ? = 960 mhz 0 5 10 15 20 25 30 35 40 29 31 33 35 37 39 41 43 output power, avg. (dbm) drain efficiency (%) -70 -65 -60 -55 -50 -45 -40 -35 adj. ch. power ratio (dbc) acp low acp up alt up efficiency rf characteristics edge measurements (not subject to production test?verified by design/characterization in infineon test fixture ) v dd = 28 v, i dq = 450 ma, p out = 26 w avg, ? = 959.8 mhz characteristic symbol min typ max unit error vector magnitude evm (rms) ? 2.5 ? % modulation spectrum @ 400 khz acpr ? ?60 ? dbc modulation spectrum @ 600 khz acpr ? ?75 ? dbc gain g ps ? 18 ? db drain efficiency h d ? 44 ? % ptf a080551f package h- 37265-2 *see infineon distributor for future availability. features ? broadband internal matching ? typical edge performance - average output power = 26 w - gain = 18 db - efficiency = 44% ? typical cw performance - output power at p?1db = 75 w - gain = 17 db - efficiency = 67% ? integrated esd protection: human body model, class 2 (minimum) ? excellent thermal stability, low hci drift ? capable of handling 10:1 vswr @ 28 v, 55 w (cw) output power ? pb-free and rohs compliant
data sheet 3 of 11 rev. 04.1, 2016-06-16 ptfa080551e ptfa080551f confidential, limited internal distribution edge evm and modulation spectrum vs. quiescent current v dd = 28 v, ? = 959.8 mhz, p out = 22 w 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 0.35 0.40 0.45 0.50 0.55 0.60 quiescent current (a) evm rms (avg. %) . -90 -80 -70 -60 -50 -40 -30 -20 modulation spectrum (dbc) evm 400 khz 600 khz edge modulation spectrum performance v dd = 28 v, i dq = 450 ma, ? = 959.8 mhz -100 -80 -60 -40 -20 0 32 34 36 38 40 42 44 46 output power (dbm) modulation spectrum (dbc) 5 15 25 35 45 55 drain efficiency (%) efficiency 400 khz 600 khz typical performance (data taken in a production test fixture) intermodulation distortion vs. output power (as measured in a broadband circuit) v dd = 28 v, i dq = 450 ma, ? 1 = 959 mhz, ? 2 = 960 mhz -70 -60 -50 -40 -30 -20 30 33 36 39 42 45 48 output power, avg. (dbm) imd (dbc) 3rd order 7th 5th edge evm performance v dd = 28 v, i dq = 450 ma, ? = 959.8 mhz 0 2 4 6 8 10 32 34 36 38 40 42 44 46 output power (dbm) evm rms (avg. %) . 5 15 25 35 45 55 drain efficiency (%) evm efficiency
data sheet 4 of 11 rev. 04.1, 2016-06-16 ptfa080551e ptfa080551f confidential, limited internal distribution gain & efficiency vs. output power v dd = 28 v, i dq = 600 ma, ? = 960 mhz 14 15 16 17 18 19 20 21 36 38 40 42 44 46 48 50 output power (dbm) gain (db) 10 20 30 40 50 60 70 drain efficiency (%) efficiency gain power sweep v dd = 28 v, ? = 960 mhz 15 16 17 18 19 36 38 40 42 44 46 48 50 output power (dbm) power gain (db) i dq = 600 ma i dq = 300 ma i dq = 450 ma linear broadband performance v dd = 28 v, i dq = 600 ma, p out avg = 44.39 dbm 44 45 46 47 48 49 50 51 860 880 900 920 940 960 frequency (mhz) efficiency (%) -30 -20 -10 0 10 20 30 40 gain, return loss (db) gain return loss efficiency im3 vs. output power at selected biases v dd = 28 v, ? 1 = 959, ? 2 = 960 mhz -60 -50 -40 -30 -20 29 31 33 35 37 39 41 43 45 47 output power, avg. (dbm) imd (dbc) 300 ma 600 ma 450 ma typical performance (cont.)
data sheet 5 of 11 rev. 04.1, 2016-06-16 ptfa080551e ptfa080551f confidential, limited internal distribution bias voltage vs. temperature voltage normalized to typical gate voltage, series show current 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 0 20 40 60 80 100 case temperature (c) normalized bias voltage (v) 0.778 a 1.55 a 3.11 a 3.88 a 4.66 a 5.44 a 6.22 a 7.00 a is-95 cdma performance v dd = 28 v, i dq = 450 ma, ? = 960 mhz 0 5 10 15 20 25 30 35 40 45 29 31 33 35 37 39 41 43 output power, avg. (dbm) drain efficiency (%) -90 -80 -70 -60 -50 -40 -30 -20 -10 0 adj. ch. power ratio (dbc) efficiency acpr fc + 1.98 mhz acp fc ? 0.75 mhz t case = 25c t case = 90c output power (p?1db) vs. drain voltage i dq = 600 ma, ? = 960 mhz 45 46 47 48 49 50 51 24 26 28 30 32 drain voltage (v) output power (dbm) typical performance (cont.)
data sheet 6 of 11 rev. 04.1, 2016-06-16 ptfa080551e ptfa080551f confidential, limited internal distribution broadband circuit impedance z source z load g s d frequency z source w z load w mhz r jx r jx 869 8.91 ?10.93 7.42 ?1.63 880 3.72 ?8.28 4.65 ?1.74 894 5.93 ?5.43 4.61 0.16 920 4.87 ?7.16 4.88 ?0.59 960 6.05 ?5.57 4.89 0.86 see next page for circuit information
data sheet 7 of 11 rev. 04.1, 2016-06-16 ptfa080551e ptfa080551f confidential, limited internal distribution a 08 055 1 e f _ s c h _ 06 - 03 - 13 rf_out r3 2k v r4 2k v r2 1.3k v lm7805 qq1 c1 0.001f v dd c2 0.001f bcp56 q1 c3 0.001f r1 1 .2k v r5 5.1 v c9 33pf l 1 l 6 l 7 r8 10 v dut c5 0 .1f c4 10f 35v c6 0.1f c8 33pf r7 5.1k r6 10 v c10 3.3pf c11 1.0pf l2 l 3 l 4 c7 0.01f l5 v dd l1 l2 c12 33pf c14 10f 50v c13 1f c16 10f 50v c23 33pf c17 33f c18 1f c19 10f 50v c21 10f 50v c20 0.1f c15 0.1f c22 0.3pf l 8 l 9 l 10 l 11 rf_in reference circuit reference circuit schematic diagram for ? = 960 mhz circuit assembly information dut ptfa080551e or ptfa080551f ldmos transistor pcb 0.76 mm [.030"] thick, e r = 4.5 rogers tmm4 2 oz. copper microstrip electrical characteristics at 960 mhz 1 dimensions: l x w (mm) dimensions: l x w (in.) l 1 0.070 l , 50.0 w 12.19 x 1.37 0.480 x 0.054 l 2 0.122 l , 50.0 w 20.93 x 1.37 0.824 x 0.054 l 3 0.031 l , 50.0 w 5.31 x 1.37 0.209 x 0.054 l 4 0.063 l , 7.5 w 9.58 x 16.21 0.377 x 0.638 l 5 0.162 l , 67.0 w 28.45 x 0.79 1.120 x 0.031 l6, l7 0.150 l , 55.0 w 25.65 x 1.17 1.010 x 0.046 l 8 0.198 l , 11.1 w 30.73 x 10.46 1.210 x 0.412 l 9 0.145 l , 38.0 w 24.21 x 2.16 0.953 x 0.085 l 10 0.009 l , 38.0 w 1.52 x 2.16 0.060 x 0.085 l 11 0.026 l , 50.0 w 4.50 x 1.37 0.177 x 0.054 1 electrical characteristics are rounded.
data sheet 8 of 11 rev. 04.1, 2016-06-16 ptfa080551e ptfa080551f confidential, limited internal distribution component description suggested manufacturer p/n or comment c1, c2, c3 capacitor, 0.001 f digi-key pcc1772ct-nd c4 tantalum capacitor, 10 f, 35 v digi-key 399-1655-2-nd c5, c6, c15, c20 capacitor, 0.1 f digi-key pcc104bct-nd c8, c9, c12, c17, ceramic capacitor, 33 pf atc 100b 330 c23 c7 capacitor, 0.01 f atc 200b 103 c10 ceramic capacitor, 3.3 pf atc 100b 3r3 c11 ceramic capacitor, 1.0 pf atc 100b 1r0 c13, c18 capacitor, 1.0 f atc 920c105 c14, c16, c19, c21 tantalum capacitor, 10 f, 50 v garrett electronics tpse106k050r0400 c22 ceramic capacitor, 0.3 pf atc 100b 0r3 l1, l2 ferrite, 8.9 mm elna magnetics bds 4.6/3/8.9-4s2 q1 transistor infineon technologies bcp56 qq1 voltage regulator national semiconductor lm7805 r1 chip resistor 1.2 k-ohms digi-key p1.2kgct-nd r2 chip resistor 1.3 k-ohms digi-key p1.3kgct-nd r3 chip resistor 2 k-ohms digi-key p2kect-nd r4 potentiometer 2 k-ohms digi-key 3224w-202etr-nd r5, r7 chip resistor 5.1 k-ohms digi-key p5.1kect-nd r6, r8 chip resistor 10 ohms digi-key p10ect-nd reference circuit assembly diagram (not to scale)* reference circuit (cont.) *gerber files for this circuit available on request a080551in_01 a080551out_01 a080551ef_assy-06-03-14 c13 c18 c22 c23 c14 c12 c17 r4 q1 qq1 c3 c1 r1 c2 r2 r5 r3 c4 c5 c8 c7 c6 r8 r6 c9 c10 c11 r7 c19 l2 l1 c21 c16 c20 c15
data sheet 9 of 11 rev. 04.1, 2016-06-16 ptfa080551e pt fa080551f confidential, limited internal distribution c l l c d g s 0.0381 [.0015] -a- 2x 7.11 [.280] lid 10.16.25 [.400.010] 15.49.51 [.610.020] flange 9.78 [.385] 15.23 [.600] 4x r1.52 [r.060] 2x r1.52 [r.060] 45 x 2.03 [.080] 2.66.51 [.105.020] 20.31 [.800] 10.16.25 [.400.010] 3.61.38 [.142.015] sph 1.57 [.062] 6. 6. all four corners 4x r0.63 [r.025] max c66065-a2326-c001-01-0027 h-36265-2.dwg 3.05 [.120] 1.02 [.040] diagram notes?unless otherwise specified: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specified otherwise. 4. pins: d = drain, s = source, g = gate. 5. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001]. 6. exposed metal plane on top and bottom of ceramic insulator. 7. gold plating thickness: s, d, g - flange & leads: 1.14 0.38 micron [45 15 microinch] package outline specifications package h-36265-2
data sheet 10 of 11 rev. 04.1, 2016-06-16 ptfa080551e ptfa080551f confidential, limited internal distribution c l l c d g 0.0381 [.0015] -a- 2x 7.11 [.280] lid 10.16.25 [.400.010] 15.49.51 [.610.020] flange 10.16 [.400] 45 x 2.03 [.080] 2.66.51 [.105.020] 10.16 [.400] 10.16.25 [.400.010] 3.61.38 [.142.015] sph 1.57 [.062] 6. all four corners 4x r0.63 [r.025] max c66065-a2327-c001-01-0027 h-37265-2.dwg 1.02 [.040] s package outline specifications (cont.) package h-37265-2 diagram notes?unless otherwise specified: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specified otherwise. 4. pins: d = drain, s = source, g = gate. 5. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001]. 6. exposed metal plane on top and bottom of ceramic insulator. 7. gold plating thickness: s, d, g - flange & leads: 1.14 0.38 micron [45 15 microinch]
data sheet 11 of 11 rev. 04.1, 2016-06-16 ptfa080551e/f confidential, limited internal distribution revision history: 2016-06-16 data sheet previous version: 2009-03-31 , data sheet page subjects (major changes since last revision) 2 update ordering information goldmos ? is a registered trademark of infineon technologies ag. edition 2016-06-16 published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com/rfpower). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infineon.com to request other information, contact us at: +1 877 465 3667 (1-877-go-ldmos) usa or +1 408 776 0600 international
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